BOJACK IRF530 MOSFET Transistors IRF530N 17A 100V N-Channel Power MOSFET TO-220AB (Pack of 10)
BOJACK IRF530 MOSFET Transistors IRF530N 17A 100V N-Channel Power MOSFET TO-220AB (Pack of 10)
BOJACK IRF530N MOSFET is a field effect transistor that can be widely used in analog and digital circuits. Basic Parameters: The IRF530N is available in a TO-220AB package On resistance Rds (on): 0.09 ohm Voltage Vgs highest: ± 20 V Number of stitches: 3 Operating temperature: -55 ° C to +175 ° C Thermal resistance connection to Case A: 0.47 ° C / W Voltage Vds Typical: 100 V Current ID continuous: 17 A Current Idm pulse: 60 A Surface-mounted device: Through hole mounting Lead-free environmental protection
Product Features
- Transistor type: MOSFET
- Transistor polarity: N-channel
- Drain current (Id Max): 17 A
- Voltage Vds Max: 100 V
- Power (max.): 70W