{"id":7573830107296,"title":"Alpha Nanotech Prime-Grade SSP 4'' Silicon Wafers (525 um, 1-30 ohm·cm, Qty: 1) 4'' Ultra-Flat Prime-Grade Double-Side Polished Silicon Wafer in a Wafer Carrier (FBM)","handle":"alpha-nanotech-prime-grade-ssp-4-silicon-wafers-525-um-1-30-ohm-cm-qty-1-4-ultra-flat-prime-grade-double-side-polished-silicon-wafer-in-a-wafer-carrier-fbm","description":"\u003ch3\u003eAlpha Nanotech Prime-Grade SSP 4'' Silicon Wafers (525 um, 1-30 ohm·cm, Qty: 1)\u003c\/h3\u003e\n\u003cp id=\"b\"\u003eWe offer the ultra-flat silicon and silica wafers of the prime grade in either\n4'' wafer carriers or gel membrane boxes. The 4'' silicon and silica wafers\nare perfect for chemical deposition or cell growth while the 5mm x 5mm diced\nchips are ideal for direct AFM and SEM imaging. The silica substrates are\nsilicon substrates uniformly coated with a 200 nm thermally grown SiO2 surface\nlayer. Compared with the transitional chemical vapour deposition (CVD) method,\nthe thermal oxidation provides a higher uniformity and a higher dielectric\nstrength.s.\u003c\/p\u003e \n\n\u003ch3\u003eProduct Features\u003c\/h3\u003e\n \u003cul class=\"a\"\u003e\n \u003cli\u003eGrade: Prime \/ CZ Virgin;\u003c\/li\u003e\n \u003cli\u003eOrientation: 100;\u003c\/li\u003e\n \u003cli\u003eType\/Dopant: P\/Boron;\u003c\/li\u003e\n \u003cli\u003eFront Surface: Polished; Back Surface: Etched;\u003c\/li\u003e\n \u003cli\u003eTIR \u0026lt; 3 m; TTV \u0026lt; 10 m; BOW \u0026lt; 10 m; Roughness \u0026lt; 0.5 nm.\u003c\/li\u003e\n \u003c\/ul\u003e\n\u003chr class=\"py-vbody\" style=\"display: none\"\u003e\n\n\n","published_at":"2022-10-11T14:27:10+11:00","created_at":"2022-10-11T14:27:12+11:00","vendor":"Alpha Nanotech Inc.","type":"","tags":["industrial2"],"price":17000,"price_min":17000,"price_max":17000,"available":true,"price_varies":false,"compare_at_price":null,"compare_at_price_min":0,"compare_at_price_max":0,"compare_at_price_varies":false,"variants":[{"id":42666208657568,"title":"Default Title","option1":"Default Title","option2":null,"option3":null,"sku":"B07C131HZ7","requires_shipping":true,"taxable":true,"featured_image":null,"available":true,"name":"Alpha Nanotech Prime-Grade SSP 4'' Silicon Wafers (525 um, 1-30 ohm·cm, Qty: 1) 4'' Ultra-Flat Prime-Grade Double-Side Polished Silicon Wafer in a Wafer Carrier (FBM)","public_title":null,"options":["Default Title"],"price":17000,"weight":54,"compare_at_price":null,"inventory_management":null,"barcode":"SSX87CAUX72","requires_selling_plan":false,"selling_plan_allocations":[],"quantity_rule":{"min":1,"max":null,"increment":1}}],"images":["\/\/dingoship.com.au\/cdn\/shop\/products\/B07C131HZ7.jpg?v=1665535346","\/\/dingoship.com.au\/cdn\/shop\/products\/71RsRftfGaL.jpg?v=1665458832"],"featured_image":"\/\/dingoship.com.au\/cdn\/shop\/products\/B07C131HZ7.jpg?v=1665535346","options":["Title"],"media":[{"alt":null,"id":25641508012192,"position":1,"preview_image":{"aspect_ratio":0.75,"height":2560,"width":1920,"src":"\/\/dingoship.com.au\/cdn\/shop\/products\/B07C131HZ7.jpg?v=1665535346"},"aspect_ratio":0.75,"height":2560,"media_type":"image","src":"\/\/dingoship.com.au\/cdn\/shop\/products\/B07C131HZ7.jpg?v=1665535346","width":1920},{"alt":null,"id":25636987666592,"position":2,"preview_image":{"aspect_ratio":0.75,"height":2560,"width":1920,"src":"\/\/dingoship.com.au\/cdn\/shop\/products\/71RsRftfGaL.jpg?v=1665458832"},"aspect_ratio":0.75,"height":2560,"media_type":"image","src":"\/\/dingoship.com.au\/cdn\/shop\/products\/71RsRftfGaL.jpg?v=1665458832","width":1920}],"requires_selling_plan":false,"selling_plan_groups":[],"content":"\u003ch3\u003eAlpha Nanotech Prime-Grade SSP 4'' Silicon Wafers (525 um, 1-30 ohm·cm, Qty: 1)\u003c\/h3\u003e\n\u003cp id=\"b\"\u003eWe offer the ultra-flat silicon and silica wafers of the prime grade in either\n4'' wafer carriers or gel membrane boxes. The 4'' silicon and silica wafers\nare perfect for chemical deposition or cell growth while the 5mm x 5mm diced\nchips are ideal for direct AFM and SEM imaging. The silica substrates are\nsilicon substrates uniformly coated with a 200 nm thermally grown SiO2 surface\nlayer. Compared with the transitional chemical vapour deposition (CVD) method,\nthe thermal oxidation provides a higher uniformity and a higher dielectric\nstrength.s.\u003c\/p\u003e \n\n\u003ch3\u003eProduct Features\u003c\/h3\u003e\n \u003cul class=\"a\"\u003e\n \u003cli\u003eGrade: Prime \/ CZ Virgin;\u003c\/li\u003e\n \u003cli\u003eOrientation: 100;\u003c\/li\u003e\n \u003cli\u003eType\/Dopant: P\/Boron;\u003c\/li\u003e\n \u003cli\u003eFront Surface: Polished; Back Surface: Etched;\u003c\/li\u003e\n \u003cli\u003eTIR \u0026lt; 3 m; TTV \u0026lt; 10 m; BOW \u0026lt; 10 m; Roughness \u0026lt; 0.5 nm.\u003c\/li\u003e\n \u003c\/ul\u003e\n\u003chr class=\"py-vbody\" style=\"display: none\"\u003e\n\n\n"}